MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 103

• Manufacturer Part Number: MC68HC908AS60CFN
• Description: IC MCU 60K FLASH 8MHZ 52-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908AS60CFN

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8.4MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 40
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

MC68HC908AS60 — Rev. 1.0
Follow this step-by-step procedure to program a byte of EEPROM:
Notes:
1. Clear EERAS1 and EERAS0 and set EELAT in the EECTL. Set
2. Write the desired data to any user EEPROM address.
3. Set the EEPGM bit. (See note c.)
4. Wait for a time, t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Clear EELAT bits. (See note d.)
8. Repeat steps 1 to 7 for more EEPROM programming.
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a. EERAS1 and EERAS0 must be cleared for programming.
b. Setting EELAT bit configures the address and data buses to latch
d. Any attempt to clear both EEPGM and EELAT bits with a single
c. To ensure proper programming sequence, the EEPGM bit cannot
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value of t
Otherwise, the part will be in erase mode.
data for programming the array. Only data with valid EEPROM
address will be latched. If another consecutive valid EEPROM
write occurs, this address and data will override the previous
address and data. Any attempts to read other EEPROM data will
read the latched data. If EELAT is set, other writes to the EECR2
will be allowed only after a valid EEPROM write.
be set if the EELAT bit is cleared and a non-EEPROM write has
occurred. When EEPGM is set, the on-board charge pump
generates the program voltage and applies it to the user
EEPROM array. When the EEPGM bit is cleared, the program
voltage is removed from the array and the internal charge pump
is turned off.
instruction will only clear EEPGM. This is to allow time for removal
of high voltage from the EEPROM array.
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EEPGM
EEPROM-2
. (See notes a and b.)
EEPGM
EEFPV
, for the programming voltage to fall.
, to program the byte.
Functional Description
Technical Data
EEPROM-2