UPD70F3765GF-GAT-AX Renesas Electronics America, UPD70F3765GF-GAT-AX Datasheet - Page 1382

• Manufacturer Part Number: UPD70F3765GF-GAT-AX
• Description: MCU 32BIT V850ES/JX3-H 128-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Hr

Specifications of UPD70F3765GF-GAT-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

V850ES/JG3-H, V850ES/JH3-H
31.5 Rewriting by Self Programming
31.5.1 Overview
internal flash memory by itself. By using this interface and a self programming library that is used to rewrite the flash
memory with a user application program, the flash memory can be rewritten by a user application transferred in advance to
the internal RAM or external memory. Consequently, the user program can be upgraded and constant data
rewritten in the field.
R01UH0042EJ0400 Rev.4.00
Sep 30, 2010
The V850ES/JG3-H and V850ES/JH3-H support a flash macro service that allows the user program to rewrite the
Note Be sure not to allocate the program code to the block where the constant data of rewriting target is allocated.
See 31.2 Memory Configuration for the block configuration.
Figure 31-16. Concept of Self Programming
Flash function execution Flash information
Self programming library
Flash macro service
Flash memory
Application program
Erase, write
CHAPTER 31 FLASH MEMORY
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Note
can be