DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 955
DF2148RTE20IV
Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Specifications of DF2148RTE20IV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Maximum programming count (N) should be set according to the actual set value of (z1,
6. Maximum erase time (tE (max))
7. Maximum erase count (N) should be set according to the actual setting (z) to allow
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
is set. It does not include the programming verification time.)
not include the erase verification time.)
tP (max) = (Wait time after P-bit setting (z1) + (z3))
(z2)
z2, z3) to allow programming within the maximum programming time (tP (max)). The
wait time after P-bit setting (z1, z2, z3) must be changed with the value of the number
of writing times (n) as follows.
The number of times for writing n
tE (max) = Waiting time after E-bit setting (z)
erase within the maximum erase time (tE (max)).
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
1
7
((N) – 6)
n
n
6
1000
z1 = 30 s, z3 = 10 s
z2 = 200 s
Rev. 4.00 Sep 27, 2006 page 909 of 1130
Maximum erase count (N)
Section 26 Electrical Characteristics
6 + Wait time after P-bit setting
REJ09B0327-0400
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