DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 931

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

26.5.6
Table 26.55 shows the flash memory characteristics.
Table 26.55 Flash Memory Characteristics (Programming/erasing operating range)
Conditions (5 V version): V
Notes: 1. Set the times according to the program/erase algorithms.
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE-bit setting *
Erase
2. Programming time per 32 bytes (Shows the total period for which the P-bit in FLMCR1
Flash Memory Characteristics
1
*
is set. It does not include the programming verification time.)
(3 V version): V
3
*
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Maximum erase count *
6
1
10
*
2
1
*
*
4
4
*
5
T
a
CC
CC
= 0 to +85°C (wide-range specifications)
= 5.0 V ±10%, V
= 3.0 V to 3.6V, V
1
*
6
*
1
1
7
1
1
1
1
*
1
*
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
tP
tE
N
t
x
y
z
N
x
y
z
N
DRP
WEC
SS
= 0 V, T
SS
= 0 V, T
—
—
100 *
10
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
—
Rev. 4.00 Sep 27, 2006 page 885 of 1130
8
a
= 0 to +75°C (regular specifications),
a
Section 26 Electrical Characteristics
Typ
10
100
10000 *
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 0 to +75°C
9
Max
200
1200
—
—
—
—
200
—
—
—
—
—
1000
—
—
10
—
—
—
—
—
120
Unit
ms/
32 bytes
ms/
block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
Times
REJ09B0327-0400
Test
Condition
z = 200 µs
z = 10 ms