DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 707

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
22.6.2
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board reprogramming of the on-chip flash
memory can be carried out by providing on-board supply of programming data, and storing a
program/erase control program in part of the program area as necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 2 or 3).
In this mode, on-chip supporting modules other than flash memory operate as they normally
would in mode 2 and 3.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory.
Figure 22.11 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Note: The watchdog timer should be activated to prevent overprogramming or overerasing
User Program Mode
Section 22 ROM
due to program runaway, etc.
Figure 22.11 User Program Mode Execution Procedure
(Mask ROM Version, H8S/2148 F-ZTAT, H8S/2147N F-ZTAT, H8S/2144 F-ZTAT, and H8S/2142 F-ZTAT)
Write the transfer program (and the program/
erase control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
program in RAM area
MD1, MD0 = 10, 11
program to RAM
Reset-start
program
Rev. 4.00 Sep 27, 2006 page 661 of 1130
REJ09B0327-0400

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