DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 753

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
23.6.2
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board reprogramming of the on-chip flash
memory can be carried out by providing an on-board means of supplying programming data, and
storing a program/erase control program in part of the program area as necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 2 or 3).
In this mode, on-chip supporting modules other than flash memory operate as they normally
would in mode 2 and 3.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory.
Figure 23.11 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Note: The watchdog timer should be activated to prevent overprogramming or overerasing
Section 23 ROM
User Program Mode
due to program runaway, etc.
Figure 23.11 User Program Mode Execution Procedure
(H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
Write the transfer program
(and the program/erase control program
if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
program in RAM area
MD1, MD0 = 10, 11
program to RAM
Reset-start
program
Rev. 4.00 Sep 27, 2006 page 707 of 1130
REJ09B0327-0400

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