DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 925
![IC H8S/2376 MCU FLASH 144LQFP](/photos/28/61/286116/144-lqfp__plqp0144kc-a_sml.jpg)
DF2376VFQ33V
Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2376VFQ33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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6. Do not perform additional programming. Erase the memory before reprogramming.
7. Before programming, check that the chip is correctly mounted in the PROM programmer.
8. Do not touch the socket adapter or chip during programming.
9. Apply the reset signal after the SWE, bit is cleared during its operation.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, too, perform only one programming operation
on a 128-byte programming unit block. Programming should be carried out with the entire
programming unit block erased.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
The reset signal is applied at least 100 µs after the SWE bit has been cleared.
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 857 of 1136
REJ09B0109-0700
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