DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 924
![IC H8S/2376 MCU FLASH 144LQFP](/photos/28/61/286116/144-lqfp__plqp0144kc-a_sml.jpg)
DF2376VFQ33V
Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2376VFQ33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 20 Flash Memory (0.35-μm F-ZTAT Version)
20.11
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Reset the flash memory before turning on/off the power.
3. Use the recommended algorithm when programming and erasing flash memory.
4. Do not set or clear the SWE bit during execution of a program in flash memory.
5. Do not use interrupts while flash memory is being programmed or erased.
Rev.7.00 Mar. 18, 2009 page 856 of 1136
REJ09B0109-0700
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas microcomputer device type with 512-kbyte on-chip
flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter.
When applying or disconnecting Vcc power, fix the RES pin low and place the flash memory
in the hardware protection state. The power-on and power-off timing requirements should also
be satisfied in the event of a power failure and subsequent recovery.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data
in flash memory.
When the SWE bit is set, data in flash memory can be rewritten. When the SWE bit is set to 1,
data in flash memory can be read only in program-verify/erase-verify mode. Access flash
memory only for verify operations (verification during programming/erasing). Also, do not
clear the SWE bit during programming, erasing, or verifying. Similarly, the SWE bit must be
cleared before executing a program or reading data from flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless
of whether the SWE bit is set or cleared.
All interrupt requests, including NMI, should be disabled during programming/erasing the
flash memory to give priority to program/erase operations.
Usage Notes
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