DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 283

IC H8S/2376 MCU FLASH 144LQFP

DF2376VFQ33V

Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2376VFQ33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
When DDS = 0 or EDDS = 0: When DRAM space is accessed in DMAC or EXDMAC single
address transfer mode, full access (normal access) is always performed. With the DRAM interface,
the DACK or EDACK output goes low from the T
In modes other than DMAC or EXDMAC single address transfer mode, burst access can be used
when accessing DRAM space.
Figure 6.42 shows the DACK or EDACK output timing for the DRAM interface when DDS = 0 or
EDDS = 0.
Read
Write
Note: n = 2 to 5
Figure 6.42 Example of DACK/EDACK Output Timing when DDS = 0 or EDDS = 0
DACK or EDACK
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
T
p
Row address
(RAST = 0, CAST = 1)
High
High
T
r
r
state.
Rev.7.00 Mar. 18, 2009 page 215 of 1136
T
c1
Column address
Section 6 Bus Controller (BSC)
T
c2
REJ09B0109-0700
T
c3

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