DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 276
![IC H8S/2376 MCU FLASH 144LQFP](/photos/28/61/286116/144-lqfp__plqp0144kc-a_sml.jpg)
DF2376VFQ33V
Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2376VFQ33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 6 Bus Controller (BSC)
6.6.12
This LSI is provided with a DRAM refresh control function. CAS-before-RAS (CBR) refreshing
is used. In addition, self-refreshing can be executed when the chip enters the software standby
state.
Refresh control is enabled when any area is designated as DRAM space in accordance with the
setting of bits RMTS2 to RMTS0 in DRAMCR.
CAS-before-RAS (CBR) Refreshing: To select CBR refreshing, set the RFSHE bit to 1 in
REFCR.
With CBR refreshing, RTCNT counts up using the input clock selected by bits RTCK2 to RTCK0
in REFCR, and when the count matches the value set in RTCOR (compare match), refresh control
is performed. At the same time, RTCNT is reset and starts counting up again from H'00.
Refreshing is thus repeated at fixed intervals determined by RTCOR and bits RTCK2 to RTCK0.
Set a value in RTCOR and bits RTCK2 to RTCK0 that will meet the refreshing interval
specification for the DRAM used.
When bits RTCK2 to RTCK0 in REFCR are set, RTCNT starts counting up. RTCNT and RTCOR
settings should therefore be completed before setting bits RTCK2 to RTCK0. RTCNT operation is
shown in figure 6.34, compare match timing in figure 6.35, and CBR refresh timing in figure 6.36.
When the CBRM bit in REFCR is cleared to 0, access to external space other than DRAM space is
performed in parallel during the CBR refresh period.
Rev.7.00 Mar. 18, 2009 page 208 of 1136
REJ09B0109-0700
RTCOR
H'00
Refresh request
Refresh Control
RTCNT
Figure 6.34 RTCNT Operation
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