DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 280

• Manufacturer Part Number: DF2376VFQ33V
• Description: IC H8S/2376 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2376VFQ33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 30K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
In some DRAMs provided with a self-refresh mode, the RAS signal precharge time immediately
after self-refreshing is longer than the normal precharge time. A setting can be made in bits
TPCS2 to TPCS0 in REFCR to make the precharge time immediately after self-refreshing from 1
to 7 states longer than the normal precharge time. In this case, too, normal precharging is
performed according to the setting of bits TPC1 and TPC0 in DRACCR, and therefore a setting
should be made to give the optimum post-self-refresh precharge time, including this time. Figure
6.40 shows an example of the timing when the precharge time immediately after self-refreshing is
extended by 2 states.
Rev.7.00 Mar. 18, 2009 page 212 of 1136
REJ09B0109-0700
φ
CSn (RASn)
UCAS, LCAS
HWR (WE)
Note: n = 2 to 5
T
Rp
Figure 6.39 Self-Refresh Timing
T
Rr
High
Software
standby
T
Rc3