DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 1101
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DF2376VFQ33V
Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2376VFQ33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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26.1.6
Table 26.13 Flash Memory Characteristics (0.35-μm F-ZTAT Version)
Conditions: V
Item
Programming time *
Erase time *
Rewrites
Data retention time
Programming
Erasing
Flash Memory Characteristics
1
*
3
V
regular specifications), T
range: wide-range specifications)
Maximum number of erases *
*
Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clearing *
Wait time after PSU bit clearing *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clearing *
Wait time after SWE bit clearing *
Maximum number of programming
*
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clearing *
Wait time after ESU bit clearing *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clearing *
Wait time after SWE bit clearing *
1
6
CC
SS
*
4
1
= AV
= 3.0 V to 3.6 V, AV
*
2
*
4
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
a
1
1
CC
1
*
*
1
1
= 0°C to 85°C (program/erase operating temperature
1
1
*
4
6
1
1
1
1
6
1
1
= 3.0 V to 3.6 V, V
1
1
1
1
1
1
Symbol
t
t
N
t
N
x
y
z
α
β
γ
ε
η
θ
N
x
y
z
α
β
γ
ε
η
θ
P
E
DRP
WEC
z1
z2
z3
Rev.7.00 Mar. 18, 2009 page 1033 of 1136
Min.
⎯
⎯
100 *
10 *
⎯
1
50
⎯
⎯
⎯
5
5
4
2
2
100
⎯
1
100
⎯
10
10
20
2
4
100
9
7
ref
Section 26 Electrical Characteristics
Typ.
10
50
10000 *
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 3.0 V to AV
8
Max.
200
1000
⎯
⎯
100
⎯
⎯
30
200
10
⎯
⎯
⎯
⎯
⎯
⎯
1000 *
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
5
Unit
ms/
128 bytes
ms/blocks
Times
Years
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
CC
REJ09B0109-0700
,
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional
programming
wait
Erase time
wait
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