DF2376VFQ33V Renesas Electronics America, DF2376VFQ33V Datasheet - Page 48
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DF2376VFQ33V
Manufacturer Part Number
DF2376VFQ33V
Description
IC H8S/2376 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2376VFQ33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2376VFQ33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Figure 6.48 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
Figure 6.49 DQMU and DQML Control Timing (Upper Byte Write Access:
Figure 6.50 DQMU and DQML Control Timing (Lower Byte Read Access:
Figure 6.51 Example of DQMU and DQML Byte Control ........................................................ 230
Figure 6.52 Operation Timing of Burst Access (BE = 1, SDWCD = 0, CAS Latency 2) ......... 232
Figure 6.53 Example of Operation Timing in RAS Down Mode (BE = 1, CAS Latency 2)..... 234
Figure 6.54 Auto Refresh Timing............................................................................................... 235
Figure 6.55 Auto Refresh Timing (TPC = 1, TPC0 = 1, RCW1 = 0, RCW0 = 1)..................... 236
Figure 6.56 Auto Refresh Timing (TPC = 0, TPC0 = 0, RLW1 = 0, RLW0 = 1) ..................... 237
Figure 6.57 Self-Refresh Timing (TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0,
Figure 6.58 Example of Timing when Precharge Time after Self-Refreshing Is Extended
Figure 6.59 Synchronous DRAM Mode Setting Timing............................................................ 240
Figure 6.60 Example of DACK/EDACK Output Timing when DDS = 1 or EDDS = 1 ............ 242
Figure 6.61 Example of DACK/EDACK Output Timing when DDS = 0 or EDDS = 0 ............ 244
Figure 6.62 Example of Timing when the Read Data Is Extended by Two States
Figure 6.63 Example of Burst ROM Access Timing (ASTn = 1, 2-State Burst Cycle) ............. 247
Figure 6.64 Example of Burst ROM Access Timing (ASTn = 0, 1-State Burst Cycle) ............. 248
Figure 6.65 Example of Idle Cycle Operation (Consecutive Reads in Different Areas) ............ 249
Figure 6.66 Example of Idle Cycle Operation (Write after Read) .............................................. 250
Figure 6.67 Example of Idle Cycle Operation (Read after Write) .............................................. 251
Figure 6.68 Relationship between Chip Select (CS) and Read (RD) ......................................... 252
Figure 6.69 Example of DRAM Full Access after External Read (CAST = 0).......................... 253
Figure 6.70 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.71 Example of Idle Cycle Operation in RAS Down Mode (Write after Read)
Figure 6.72 Example of Synchronous DRAM Full Access after External Read
Figure 6.73 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.74 Example of Idle Cycle Operation in RAS Down Mode
Figure 6.75 Example of Idle Cycle Operation in RAS Down Mode
Rev.7.00 Mar. 18, 2009 page xlvi of lxvi
REJ09B0109-0700
(SDWCD = 1) ......................................................................................................... 227
SDWCD = 0, CAS Latency 2) ................................................................................ 228
CAS Latency 2) ....................................................................................................... 229
RLW1 = 0, RLW0 = 0) ........................................................................................... 238
by 2 States (TPCS2 to TPCS0 = H'2, TPC1 = 0, TPC0 = 0, CAS Latency 2) ........ 239
(DDS = 1, or EDDS = 1, RDXC1 = 0, RDXC0 = 1, CAS Latency 2) .................... 245
(Consecutive Reads in Different Areas) (IDLC = 0, RAST = 0, CAST = 0) .......... 254
(IDLC = 0, RAST = 0, CAST = 0).......................................................................... 254
(CAS Latency 2)...................................................................................................... 255
(Read in Different Area) (IDLC = 0, CAS Latency 2) ............................................ 256
(Read in Different Area) (IDLC = 1, CAS Latency 2) ............................................ 257
(Write after Read) (IDLC = 0, CAS Latency 2) ...................................................... 258
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