ATTINY20-XU Atmel, ATTINY20-XU Datasheet - Page 169

• Manufacturer Part Number: ATTINY20-XU
• Description: MCU AVR 2KB FLASH 12MHZ 14TSSOP
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY20-XU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 12MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Processor Series: ATtiny
• Core: AVR
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, TWI
• Maximum Clock Frequency: 12 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

19.4.3.2
19.4.3.3
19.4.3.4
19.4.3.5
19.4.4
8235B–AVR–04/11
Reading NVM Lock Bits
Erasing the Code Section
Writing a Double Code Word
Erasing the Configuration Section
Writing a Configuration Word
The algorithm for erasing all pages of the Flash code section is as follows:
The algorithm for writing two words to the code section is as follows:
The algorithm for erasing the Configuration section is as follows:
The algorithm for writing a Configuration word is as follows.
The Non-Volatile Memory Lock Byte can be read from the mapped location in data memory.
1. Write the SECTION_ERASE command to the NVMCMD register
2. Start the erase operation by writing a dummy byte to the high byte of any word location
3. Wait until the NVMBSY bit has been cleared
1. Write the DWORD_WRITE command to the NVMCMD register
2. Write the low byte of the low data word to the low byte of a target word location
3. Write the high byte of the low data word to the high byte of the same target word
4. Send IDLE character as described in section
5. Write the low byte of the high data word to the low byte of the next target word location
6. Write the high byte of the high data word to the high byte of the same target word loca-
7. Wait until the NVMBSY bit has been cleared
1. Write the SECTION_ERASE command to the NVMCMD register
2. Start the erase operation by writing a dummy byte to the high byte of any word location
3. Wait until the NVMBSY bit has been cleared
1. Write the DWORD_WRITE command to the NVMCMD register
2. Write the low byte of the data word to the low byte of the configuration word location
3. Write the high byte of the data word to the high byte of the same configuration word
4. Send IDLE character as described in section
5. Write a dummy byte to the low byte of the next configuration word location
6. Write a dummy byte to the high byte of the same configuration word location. This will
7. Wait until the NVMBSY bit has been cleared
inside the code section
location
tion. This will start the Flash write operation
inside the configuration section
location
start the Flash write operation
“Supported Characters” on page 154
“Supported Characters” on page 154
ATtiny20
169