LFDAS12XSDT Freescale Semiconductor, LFDAS12XSDT Datasheet - Page 543

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LFDAS12XSDT

Manufacturer Part Number
LFDAS12XSDT
Description
HARDWARE MC9S12XS 52-PIN
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of LFDAS12XSDT

Module/board Type
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
-
phrase index values for the Read Once command range from 0x0000 to 0x0007. During execution of the
Read Once command, any attempt to read addresses within P-Flash block will return invalid data.
18.4.2.5
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
Freescale Semiconductor
Register
FSTAT
Program P-Flash Command
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
1
CCOBIX[2:0]
Table 18-39. Program P-Flash Command FCCOB Requirements
Global address [2:0] must be 000
MGSTAT1
MGSTAT0
ACCERR
Error Bit
FPVIOL
000
001
010
011
100
101
Table 18-38. Read Once Command Error Handling
S12XS Family Reference Manual, Rev. 1.11
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see
Set if an invalid phrase index is supplied
None
Set if any errors have been encountered during the read
Set if any non-correctable errors have been encountered during the read
Global address [15:0] of phrase location to be programmed
0x06
CAUTION
Word 0 program value
Word 1 program value
Word 2 program value
Word 3 program value
FCCOB Parameters
Error Condition
Global address [22:16] to
identify P-Flash block
256 KByte Flash Module (S12XFTMR256K1V1)
Table
18-28)
1
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