MPC8313EZQADDC Freescale Semiconductor, MPC8313EZQADDC Datasheet - Page 431
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MPC8313EZQADDC
Manufacturer Part Number
MPC8313EZQADDC
Description
Microprocessors - MPU 8313 REV2.2 PB W/ENC
Manufacturer
Freescale Semiconductor
Datasheet
1.MPC8313CZQADDC.pdf
(1214 pages)
Specifications of MPC8313EZQADDC
Processor Series
MPC8313E
Core
e300
Data Bus Width
16 bit
Maximum Clock Frequency
133 MHz
Program Memory Size
16 KB
Data Ram Size
16 KB
Interface Type
I2C
Mounting Style
SMD/SMT
Package / Case
PBGA
Number Of Programmable I/os
32
Number Of Timers
4
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9.5.3
The following section describes the commands and timings the controller uses when operating in DDR2
or DDR modes.
All read or write accesses to DDR SDRAM are performed by the DDR memory controller using JEDEC
standard DDR SDRAM interface commands. The SDRAM device samples command and address inputs
on rising edges of the memory clock; data is sampled using both the rising and falling edges of DQS. Data
read from the DDR SDRAM is also sampled on both edges of DQS.
The following DDR SDRAM interface commands (summarized in
controller. All actions for these commands are described from the perspective of the SDRAM device.
Freescale Semiconductor
x 2
x 3
x 2
Row
•
•
•
•
Col
x
MRAS
MCAS
MRAS
MCAS
MRAS
MCAS
MBA
MBA
MBA
Row activate—Latches row address and initiates memory read of that row. Row data is latched in
SDRAM sense amplifiers and must be restored by a precharge command before another row
activate occurs.
Precharge—Restores data from the sense amplifiers to the appropriate row. Also initializes the
sense amplifiers in preparation for reading another row in the memory array (performing another
activate command). Precharge must occur after read or write, if the row address changes on the
next open page mode access.
Read—Latches column address and transfers data from the selected sense amplifier to the output
buffer as determined by the column address. During each succeeding clock edge, additional data is
driven without additional read commands. The amount of data transferred is determined by the
burst size which defaults to 4.
Write—Latches column address and transfers data from the data pins to the selected sense
amplifier as determined by the column address. During each succeeding clock edge, additional data
is transferred to the sense amplifiers from the data pins without additional write commands. The
Table 9-29. Example of Address Multiplexing for 32-Bit Data Bus Interleaving between
JEDEC Standard DDR SDRAM Interface Commands
msb
MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, Rev. 2
1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
13 12 11 10 9 8 7 6 5 4 3 2 1
12 11 10 9
Two Banks with Partial Array Self Refresh Disabled (continued)
12 11 10 9
8
7
8
6
7
5
6
4
5
Address from Core Master
3
4
2
3
1
2
0
1
SEL
CS
0
0
SEL
SEL
CS
CS
17 18 19 20 21 22 23 24 25 26 27 28 29 30–31
2
1 0
Table
1
1
0
0
9 8 7 6 5 4 3 2 1 0
9
9
9-30) are provided by the DDR
8
8
7
7
6
6
5
5
DDR Memory Controller
4
4
3
3
2
2
1
1
0
0
9-37
lsb
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