S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 831

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S912XET512J3VALR

Manufacturer Part Number
S912XET512J3VALR
Description
16-bit Microcontrollers - MCU 16 BIT,512K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S912XET512J3VALR

Rohs
yes
Core
HCS12X
Processor Series
MC9S12XE
Data Bus Width
16 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
512 KB
Data Ram Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-112
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S912XET512J3VALR
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Chapter 24
128 KByte Flash Module (S12XFTM128K2V1)
Freescale Semiconductor
Revision
Number
V01.10
V01.11
V01.12
30 Nov 2007
19 Dec 2007
25 Sep 2009
Revision
Date
24.1.2.2/24-833
24.3.2.1/24-843
24.4.2.4/24-870
24.4.2.6/24-871
24.3.2.1/24-843
24.4.1.2/24-862
24.1.3/24-834
24.4.2/24-867
24.4.2/24-867
24.4.2/24-867
24.4.2/24-867
24.3.1/24-836
24.1.3/24-834
24.3.1/24-836
24.3.1/24-836
24.3.2/24-841
24.4.2.11/24-
24.4.2.11/24-
24.4.2.11/24-
24.4.2.19/24-
24.1/24-832
24.6/24-890
Sections
Affected
875
875
875
884
MC9S12XE-Family Reference Manual Rev. 1.25
Table 24-1. Revision History
- Correction
- Removed Load Data Field command 0x05
- Updated Command Error Handling tables based on parent-child relationship
with FTM256K2
- Corrected Error Handling table for Full Partition D-Flash, Partition D-Flash,
and EEPROM Emulation Query commands
- Corrected maximum allowed ERPART for Full Partition D-Flash and Partition
D-Flash commands
- Corrected P-Flash IFR Accessibility table
- Corrected Buffer RAM size in Feature List
- Corrected EEE Resource Memory Map
- Changed D-Flash size from 16Kbytes to 32Kbytes
- Corrected P-Flash Memory Map
- Change references for D-Flash from 16 Kbytes to 32 Kbytes
- Clarify single bit fault correction for P-Flash phrase
- Expand FDIV vs OSCCLK Frequency table
- Add statement concerning code runaway when executing Read Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Program Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Verify Backdoor
Access Key command from Flash block containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Add ACCERR condition for Disable EEPROM Emulation command
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
toTable 24-6
Description of Changes
831

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