S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 1233

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S912XET512J3VALR

Manufacturer Part Number
S912XET512J3VALR
Description
16-bit Microcontrollers - MCU 16 BIT,512K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S912XET512J3VALR

Rohs
yes
Core
HCS12X
Processor Series
MC9S12XE
Data Bus Width
16 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
512 KB
Data Ram Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-112
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S912XET512J3VALR
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
The number of program/erase cycles for the EEPROM/D-Flash depends upon the partitioning of D-Flash
used for EEPROM Emulation. Defining RAM size allocated for EEE as EEE-RAM and D-Flash partition
allocated to EEE as EEE_NVM, the minimum number of program/erase cycles is specified depending
upon the ratio of EEE_NVM/EEE_RAM. The minimum ratio EEE_NVM/EEE_RAM =8.
Freescale Semiconductor
5. This represents the number of writes of updated data words to the EEE_RAM partition. Typical endurance performance for
6. This is equivalent to using a single byte or aligned word in the EEE_RAM with 32K D-Flash allocated for EEEPROM
# K Cycles
(Log)
1,000,000
the Emulated EEPROM array is based on typical endurance performance and the EEE algorithm implemented on this
product family. Spec. table quotes typical endurance evaluated at 25°C for this product family.
100,000
10,000
1,000
100
10
10
Figure A-2. Program/Erase Dependency on D-Flash Partitioning
100
MC9S12XE-Family Reference Manual Rev. 1.25
1000
10,000
100,000
EEE_NVM/EEE_RAM ratio
(Log)
Appendix A Electrical Characteristics
20% Spec Cycles
10 Year Data Retention
Spec Cycles
5 Year Data Retention
1233

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