S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 1230

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S912XET512J3VALR

Manufacturer Part Number
S912XET512J3VALR
Description
16-bit Microcontrollers - MCU 16 BIT,512K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S912XET512J3VALR

Rohs
yes
Core
HCS12X
Processor Series
MC9S12XE
Data Bus Width
16 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
512 KB
Data Ram Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-112
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S912XET512J3VALR
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Appendix A Electrical Characteristics
A.3.1.24
The typical EEE copy down time is given by the following equation
The maximum EEE copy down time is given by the following equation
Worst case for Enable EEPROM Emulation allows for all the EEE records to have to be copied which is a
very low probability scenario only likely in the case that the EEE is mostly full of unchanging data (the
records for which are stored in consecutive D-Flash sectors).
1. Restrictions for oscillator in crystal mode apply.
2. Valid for both “Erase verify all” or “Erase verify block” on 256K block without failing locations
3. This is a typical value for a new device
4. Maximum partitioning
1230
Conditions are as shown in
Num C
5a
5b
7a
9a
9b
9d
9e
10
11
12
12
t
t
5c
9c
1
2
3
4
6
7
8
dfcd
dfcd
D External oscillator clock
D Bus frequency for programming or erase operations
D Operating frequency
D P-Flash phrase programming
D P- Flash phrase program time using D-LOAD on 4 blocks
D P-Flash phrase program time using D-LOAD on 3 blocks
D P-Flash phrase program time using D-LOAD on 2 blocks
P P-Flash sector erase time
P Erase All Blocks (Mass erase) time
D Unsecure Flash
D P-Flash erase verify (blank check) time
D D-Flash word programming one word
D D-Flash word programming two words
D D-Flash word programming three words
D D-Flash word programming four words
D D-Flash word programming four words crossing row
D D-Flash sector erase time
D D-Flash erase verify (blank check) time
D EEE copy down (mask sets 5M48H, 3M25J, 2M53J,
D EEE copy down (other mask sets)
=
=
boundary
1M12S, 1N35H, 1N36H)
(
(
14000
34000
EEE Copy Down
+
+
(
(
316 ERPART
316 ERPART
Table
A-4, with f
Rating
MC9S12XE-Family Reference Manual Rev. 1.25
Table A-19. NVM Timing Characteristics
NVMBUS
)
)
+
+
(2)
(
(
1500
1500
= 50MHz and f
(
(
124 DFPART
124 DFPART
NVMOP
f
Symbol
f
NVMOSC
f
t
t
t
NVMBUS
t
bwpgm4
bwpgm3
bwpgm2
NVMOP
bwpgm
t
t
t
t
t
t
t
t
t
t
t
check
check
mass
dpgm
dpgm
dpgm
dpgm
dpgm
t
eradf
dfrcd
dfrcd
t
uns
era
= 1MHz unless otherwise noted.
)
)
)
)
Min
800
)
)
2
1
×
×
--------------------- -
f
--------------------- -
f
NVMBUS
NVMBUS
255000
205000
1
1
5.2
Typ
162
231
208
185
101
101
153
212
282
298
20
88
(3)
Freescale Semiconductor
275000
225000
33500
17500
1050
50
Max
173
264
233
202
102
102
165
230
316
342
50
21
95
21
(1)
2
(4)
(5)
MHz
MHz
Unit
kHz
t
t
t
t
ms
ms
ms
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
cyc
cyc
cyc
cyc

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