AT91SAM7S32-AI ATMEL [ATMEL Corporation], AT91SAM7S32-AI Datasheet - Page 115
AT91SAM7S32-AI
Manufacturer Part Number
AT91SAM7S32-AI
Description
AT91 ARM Thumb-based Microcontrollers
Manufacturer
ATMEL [ATMEL Corporation]
Datasheet
1.AT91SAM7S32-AI.pdf
(446 pages)
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Flash Write Command
Flash Full Erase
Command
Flash Lock
Commands
6071A–ATARM–28-Oct-04
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to
the Flash:
•
•
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can
be chained; an internal address buffer is automatically increased.
Table 36. Write Command
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock
region is composed of several pages, the programmer writes to the first pages of the lock
region using Flash write commands and writes to the last page of the lock region using a Flash
write and lock command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock bits must be deactivated before using the Full Erase command. This can be done by
using the CLB command.
Table 37. Full Erase Command
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated at the same
time. Bit 0 of Bit Mask corresponds to the first lock bit and so on.
In the same way, the Clear Lock command (CLB) is used to clear lock bits. All the lock bits
can also be cleared by the EA command.
Read/Write
Write
Write
Write
Write
Write
Write
Read/Write
Write
before access to any page than the current one
at the end of the number of words transmitted
DR Data
EA
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
AT91SAM7S32 Preliminary
115
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