EVX10AS150ATP ETC-unknow, EVX10AS150ATP Datasheet - Page 47

• Manufacturer Part Number: EVX10AS150ATP
• Description: Adc Single 2.5gsps 10-bit Lvds 317-pin Ebga
• Manufacturer: ETC-unknow

5. Applications Information
5.1
5.1.1
e2v semiconductors SAS 2009
Bypassing, Decoupling and Grounding
Decoupling capacitor
Figure 4-16. Junction Temperature Versus Diode Voltage for I = 1 mA
Globally, the ADC is decoupled following a four row decoupling capacitors strategy, providing adequate
decoupling over frequency taking into account the external decoupling: at Evaluation Board and Pack-
age surrounding level, and the internal ADC decoupling (transparent for the end-user): at internal
Package decoupling and on chip decoupling level.
ADC external decoupling: typical values
It is recommended to decouple all power supplies to ground as close as possible to the device balls.
ADC internal decoupling: typical values
1. At Evaluation Board incoming level: (1
2. Close to Package surrounding: 2
3. Inside Package: (3
4. On chip decoupling level: (4th level): nearly 300 pF per power supplies.
980
970
960
950
940
930
920
910
900
890
880
870
860
850
840
830
820
810
800
790
780
770
760
750
740
730
720
710
700
capacitor.
V
CCD
-30
and 288 nF for V
-20
-10
0
rd
y = -1.193x + 913.714
level): 100 pF per power supply plane to ground plane.
PLUSD
Junction
10
.
20
T
nd
emperature versus Diode Voltage for I = 1mA
30
level: 144 nF per analog supply (V
st
40
level): ~ 1 µF (tantalum) in parallel with ~ 100 nF chip
50
60
70
80
90
CCA5
100
Junction temperature (°C)
& V
110
EV10AS150A
0954B–BDC–12/09
CCA3
120
), 192 nF for
130
140
47