H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 43

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MARKING INFORMATION
Rev 0.6 / Oct. 2004
- hynix
- KOR
- HY27xSxx121mTxB
- Y: Year (ex: 4=year 2004, 05= year 2005)
- ww: Work Week (ex: 12= work week 12)
- xx: Process Code
Note
- Capital Letter
- Small Letter
Package
WSOP1
HY: HYNIX
27: NAND Flash
x: Power Supply
S: Classification
xx: Bit Organization
12: Density
1: Mode
M: Version
x: Package Type
x: Package Material
x: Operating Temperature
x: Bad Block
TSOP1
FBGA
/
/
H
x
Y
x
2
x
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
: Hynix Symbol
: Origin Country
: Part Number
: U(2.7V~3.6V), S(1.7V~2.2V)
: Single Level Cell+Single Die
: 08(x8), 16(x16)
: 512Mb
: 1nCE & 1R/nB; CE don't care
: 1st Generation
: T(TSOP1), V(WSOP1), F(FBGA)
: Blank(Normal), P(Lead Free)
: C(0℃~70℃), E(-25℃~85℃)
: B(Included Bad Block), S(1~5 Bad Block),
: Fixed Item
: Non-fixed Item
7
x
I(-40℃~85℃)
P(All Good Block)
Marking Example
x
S
HY27US(08/16)121M Series
x
HY27SS(08/16)121M Series
Y
x
W
1
W
K
2
O
1
x
M
R
x
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