H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 30

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
Note: (1). The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 32, 33 and 34.
t
t
Sym-
WHRL
WLWL
CLE
ALE
I/O
Alt.
WE
bol
CE
(2). To break the sequential read cycle, CE must be held High for longer than t
(3). ES = Electronic Signature.
(4). 1G DDP
Sym-
bol
t
t
WHR
WC
(CE Setup time)
(ALE Setup time)
Write Enable High to Read Enable Low
Write Enable Low to Write Enable
Low
(CLE Setup time)
tELWL
tALLWL
tCLHWL
(Data Setup time)
tDVWH
Figure 21. Command Latch AC Waveforms
Parameter
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Command
Write Cycle time
tWLWH
(CE Hold time)
(CLE Hold time)
(Data Hold time)
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tWHEH
(ALE Hold time)
EHEL
tHWCLL
tWHDX
tWHALH
.
Min
Min
Device
3.3V
50
60
Device
1.8V
80
30
Unit
ns
ns