H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 29

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Sym-
ALLRL1
ALLRL2
BHRL
BLBH1
BLBH2
BLBH3
BLBH4
CLLRL
DZRL
EHBH
EHEL
EHQZ
ELQV
RHBL
RHRL
RHQZ
RLRH
RLRL
RLQV
WHBH
WHBL
Alt.
bol
t
READID
Sym-
t
t
t
t
t
t
t
t
PROG
t
bol
BERS
t
t
t
t
t
t
t
t
t
AR1
AR2
RST
CLR
t
CRY
CEH
CHZ
t
CEA
RB
REH
RHZ
RP
RC
REA
t
WB
RR
IR
R
R
Address Latch Low to Read Enable
Low
Ready/Busy High to Read Enable Low
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Ready/Busy High (CE intercepted read)
Chip Enable High to Chip Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to Ready/Busy Low
Read Enable High to Read Enable
Low
Read Enable High to Output Hi-Z
Read Enable Low to Read Enable
High
Read Enable Low to Read Enable Low
Read Enable Low to Output Valid
Write Enable High to Ready/Busy High
Write Enable High to Ready/Busy Low
Ready/Busy Low to Ready/Busy High
Parameter
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
(2)
Read Electronic Signature
Read cycle
Read Busy time, 512Mb, 1Gb
Program Busy time
Erase Busy time
Reset Busy time, during ready
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
Read Enable High Hold time
Read Enable Pulse Width
Read Enable Access time
Read ES Access time
Read Cycle time
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
4)
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Device
3.3V
45
10
50
12
45
15
30
50
35
12
70+tr
500
500
100
100
100
20
10
10
20
15
30
3
5
5
0
(1)
Device
1.8V
25
80
15
75
20
60
80
60
15
29
Unit
ms
ns
us
us
us
us
us
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
us
ns
ns
ns
ns