H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 40

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16: 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
Rev 0.6 / Oct. 2004
Symbol
alpha
A1
A2
CP
E1
D
A
B
C
E
e
L
Figure 37. 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
11.910
19.900
18.300
0.050
0.980
0.170
0.100
0.500
Min
0
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
millimeters
12.000
20.000
18.400
0.500
Typ
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
12.120
20.100
18.500
1.200
0.150
1.030
0.250
0.200
0.050
0.680
Max
5
40