H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 25

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9: Program, Erase Time and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other conditions above those indi-
cated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability.
Table 10: Absolution Maximum Rating
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage
may overshoot to V
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Mea-
surement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that
the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Rev 0.6 / Oct. 2004
Symbol
V
T
T
V
IO
BIAS
Program/Erase Cycles (per block)
STG
CC
(1)
Page Program Time
Block Erase Time
CC
Data Retention
Parameters
+ 2V for less than 20ns during transitions on I/O pins.
Input or Output Voltage
Supply Voltage
Temperature Under Bias
Storage Temperature
Parameter
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
100,000
Min
10
3.3 V devices
3.3 V devices
1.8V devices
1.8V devices
NAND Flash
Typ
200
2
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
Min
-0.6
-0.6
-0.6
-0.6
-50
-65
NAND Flash
Max
500
3
Max
125
150
2.7
4.6
2.7
4.6
cycles
years
Unit
ms
us
Unit
o
o
V
V
V
V
C
C
25