H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 36

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
WE
RE
RB
CLE
CE
ALE
I/O
ALE
CLE
I/O
WE
RE
RB
Setup Command
Block Erase
60h
tWLWL
(Write Cycle time)
cycle 1
Add. N
FFh
Block Address Input
cycle 2
Add. N
Figure 30. Block Erase AC Waveform
Figure 31. Reset AC Waveform
cycle 3
Add. N
(Reset Busy time)
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
tBLBH4
Confirm
Code
D0h
(Erase Busy time)
Block Erase
tBLBH3
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
Read Status Register
70h
SR0
36