H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 41

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 17: 48-WSOP1 - 48-lead Plastic Thin Small Outline, 12 x 17mm, Package Mechanical Data
Rev 0.6 / Oct. 2004
Figure 38. 48-WSOP1 - 48-lead Plastic Very Very Thin Small Outline, 12 x 17mm, Package Outline
Symbol
alpha
A1
A2
CP
D
D
A
B
C
E
e
L
11.910
16.900
15.300
0.540
0.130
0.065
0.450
Min
0
0
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
millimeters
12.000
17.000
15.400
0.500
Typ
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
12.120
17.100
15.500
0.700
0.080
0.620
0.230
0.175
0.050
0.750
Max
41