H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 20

MEMORY, FLASH NAND 512MB, TSOP48

H27US08121B-TPCB

Manufacturer Part Number
H27US08121B-TPCB
Description
MEMORY, FLASH NAND 512MB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27US08121B-TPCB

Memory Size
512Mbit
Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Package / Case
TSOP
Base Number
27
Memory Type
Flash - NAND
Memory Configuration
64M X 8, 32M X 16
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
P/E/R Controller
Status Register bit SR6 has two different functions depending on the current operation.
During all other operations SR6 acts as a P/E/R Controller bit, which indicates whether the P/E/R Controller is active or
inactive. When the P/E/R Controller bit is set to '0', the P/E/R Controller is active (device is busy); when the bit is set
to '1', the P/E/R Controller is inactive (device is ready).
P/E/R Controller Bit (SR5)
The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or inactive. When the P/E/R
Controller bit is set to '0', the P/E/R Controller is active (device is busy); when the bit is set to '1', the P/E/R Controller
is inactive (device is ready).
Error Bit (SR0)
The Error bit is used to identify if any errors have been detected by the P/E/R Controller. The Error Bit is set to '1' when
a program or erase operation has failed to write the correct data to the memory. If the Error Bit is set to '0' the opera-
tion has completed successfully.
SR4, SR3 and SR2 are Reserved
Rev 0.6 / Oct. 2004
20

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