H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 32

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WE
CLE
RE
I/O
Note:1. CLE = Low, ALE = Low, WE = High.
CE
Rev 0.6 / Oct. 2004
I/O
RE
RB
CE
(RE Accesstime)
tBHRL
tCLHWL
(Data Setup time)
tRLQV
tELWL
(RE High Holdtime)
Figure 24. Sequential Data Output after Read AC Waveforms
tDVWH
Figure 25. Read Status Register AC Waveform
(Read Cycle time)
Data Out
tRHRL
tRLRL
70h
tRLQV
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
tWLWH
tWHDX
(Data Hold time)
tWHCLL
tWHEH
Data Out
tRHQZ
tWHRL
tDZRL
tCLLRL
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tELQV
tRLQV
Status Register
tRLQV
tRHQZ
tEHQZ
Data Out
tEHQZ
Output
tRHQZ
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