H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 15

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A9-A25(1)
A9-A25(1)
Note: 1. If t
Note: 1. Highest address depends on device density.
Rev 0.6 / Oct. 2004
A0-A7
A0-A7
RE
RB
CE
CLE
ALE
WE
I/O
ELWL
(1st half Page)
(1st half Page)
Command
01h/ 50h
Code
00h/
is less than 10ns, t
Read A Command, x8 Devices
Area A
Area A
Read B Command, x8 Devices
(2nd half
(2nd half
Address Input
Area B
Area B
Page)
Page)
WLWH
must be minimum 35ns, otherwise, t
Figure 10. Read (A, B, C) Operation
Figure 11. Read Block Diagrams
(Spare)
(Spare)
Area C
Area C
tBLBH1
(read)
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Busy
A0-A2 (x16)
A9-A25(1)
A9-A25(1)
A0-A3 (x8)
A0-A7
WLWH
Data Output (sequentially)
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
may be minimum 25ns.
Read A Command, x16 Devices
Area A
Read C Command, x8/x16 Devices
A4-A7 (x8), A3-A7 (x16) are don't care
(main area)
Area A
Area A/B
Area C
(Spare)
(50h)
Area C
15