H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 31

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CLE
ALE
I/O
CE
(CE Setup time)
WE
Rev 0.6 / Oct. 2004
CLE
CE
ALE
WE
I/O
(ALE Setup time)
(ALE Setup time)
tELWL
tALHWL
tALLWL
(Data Setup time)
(Data Setup time)
tWLWH
tWLWH
(ALE Hold time)
tDVWH
tDVWH
tWHALL
tCLLWL
(CLE Setup time)
tWHWL
Address
cycle 1
Figure 22. Address Latch AC Waveforms
tWLWL
tWLWL
Data In 0
Figure 23. Data Input Latch AC Waveforms
(Data Hold time)
tWLWH
(Data Hold time)
tDVWH
tWHDX
tWHALL
tDVWH
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
tWHDX
tWHWL
Address
cycle 2
tWLWH
tWLWL
Data In 1
tWLWH
tDVWH
tWHDX
tWHALL
tWHWL
tWHDX
tDVWH
Address
cycle 3
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tWLWL
tWLWH
Data In
tDVWH
Last
tWHDX
tWLWH
Address
tWHDX
cycle 4
tWHEH
(CE Hold time)
tWHCLH
(CLE Hold time)
tWHDX
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