H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 26

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11: Operating and AC Measurement Conditions
Note : (1). TBD
Table 12: Capacitance
Note: T
Rev 0.6 / Oct. 2004
Load Capacitance (C
Symbol
Input and Output Timing Ref. Voltages
C
C
I/O
A
IN
= 25
Ambient Temperature (T
o
Input Pulses Voltages
Supply Voltage (V
C, f = 1 MHz. C
Input Capacitance
Input/Output Capacitance
L
) (1 TTL GATE and C
Input Rise and Fall Times
IN
Parameter
CC
and C
)
Parameter
A
)
I/O
are not 100% tested.
L
)
1.8V devices
2.6V devices
3.3V devices
Commercial Temp.
Indurstrial Temp.
1.8V devices
2.6V devices
3.3V devices
1.8V devices
2.6V devices
3.3V devices
1.8V devices
2.6V devices
3.3V devices
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Test Condition
(1)
(1)
(1)
(1)
V
V
IN
IL
= 0V
= 0V
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
Min
1.7
2.4
2.7
-40
0.4
Typ
0
0
0
NAND Flash
V
100
1.5
CC
30
30
5
/2
Max
1.95
V
V
2.8
3.6
2.4
70
85
Max
CC
CC
10
10
Unit
o
o
pF
pF
pF
Unit
ns
V
V
V
V
V
V
V
V
V
C
C
pF
pF
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