H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 22

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
Sequential Row Read Disabled
If the device is delivered with Sequential row read disabled and Automatic Read Page 0 at Power-up, only the first
page (Page 0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enabled), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time t
The Sequential Row Read operation can be inhibited or interrupted by de-asserting E (set to V
mand. Refer to Figure 19.
Note: (1). V
Vccth (1)
Vcc
RB
WE
CLE
RE
CE
ALE
I/O
CCth
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
is equal to 2.5V for 3.3V Power Supply devices and to 1.5V for 1.8V Power Supply devices.
Busy
tBLBH1
Data
from Address N to Last Byte or Word in Page
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
N
Data
N+1
Data Output
Data
N+2
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
BLBH1
.
IH
Data
Last
) or by issuing a com-
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