H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 4

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
ALE
CLE
WE
WP
CE
RE
ALE
CLE
WP
WE
RE
CE
Figure 1: Logic Diagram
NAND
Flash
Command Register
Vcc
Vss
Register/Counter
Command
Interface
Address
Logic
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
RB
Figure 2. LOGIC BLOCK DIAGRAM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
RB
High Voltage
Controller,
Generator
P/E/R
I/O
I/O
VCC
ALE
CLE
VSS
WP
WE
NC
DU
RE
RB
CE
8-15
0-7
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
Table 1: Signal Name
Data Input/Output, Address Inputs, or Com-
mand Inputs for x8 and x16 device
Data Input/Outputs for x16 Device
I/O0-I/O7, x8/x16
Cache Register
I/O8-I/O15, x16
I/O Buffers &
Read/Busy (open-drain output)
Page Buffer
Memory Array
Y Decoder
NAND Flash
Not Connected Internally
Latches
Command Latch Enable
Address Latch Enable
Supply Voltage
Write Protect
Write Enable
Read Enable
Chip Enable
Do Not Use
Ground
4