H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 13

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
Rev 0.6 / Oct. 2004
I/O
I/O
I/O
Bytes 0-255
Area A
(00h)
A
00h
01h
50h
(00h, 01h, 50h)
x8 Devices
80h
80h
80h
Bytes 256-511
Pointer
Area B
(01h)
B
Address
Address
Address
Inputs
Inputs
Inputs
AREA A, B, C can be programmed depending on how much data is input.
AREA B, C can be programmed depending on how much data is input.
Figure 9. Pointer Operations for Programming
The 01h command must be re-issued before each program.
512-527
Area C
(50h)
Bytes
C
Input
Input
Input
Data
Data
Data
Figure 8. Pointer Operation
Subsequent 00h commands can be omitted.
Subsequent 50h commands can be omitted.
Page Buffer
Only Areas C can be programmed.
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
10h
10h
10h
AREA A
AREA B
AREA C
00h
01h
50h
80h
80h
80h
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
Words 0-256
Area A
(00h)
A
x16 Devices
Address
Address
Address
Inputs
Inputs
Inputs
(00h, 50h)
Pointer
Input
Input
Input
Data
Data
Data
256-263
Area C
Words
(50h)
C
10h
10h
10h
Page Buffer
13