H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 24

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 8: Valid Block
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 9.
Rev 0.6 / Oct. 2004
Symbol
N
VB
# of Valid Block
Block Address=
Figure 20. Bad Block Management Flowchart
Para.
Block 0
START
=FFh?
block?
Data
END
Last
YES
YES
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
NO
NO
4016
Min
Bad Block table
Block Address
Update
Increment
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
4096
Max
Blocks
Unit
24