H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 27

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13: DC Characteristics, 3.3V Device and 1.8V Device
Rev 0.6 / Oct. 2004
I
Sym-
OL
V
I
I
I
I
I
V
bol
V
V
I
V
CC1
CC2
CC3
CC4
CC5
I
LKO
(RB)
LO
OH
OL
LI
IH
IL
(CMOS)
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
Operating
Current
Stand-by Current (TTL)
Stand-By Current
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
V
(Erase and Program
lockout)
DD
Supply Voltage
Parameter
Sequentia
Read
Program
Erase
3.3V I
1.8V I
3.3V I
1.8V I
3.3V V
1.8V V
CE=V
CE=V
t
CE=V
WP=0/V
V
V
RLRL
Test Condition
IN
OUT
= 0 to V
OL
OL
= 0 to V
OH
OH
minimum
IL
IH
CC
OL
OL
, I
, WP=0V/V
= 2.1mA
= 100uA
-0.2,
CC
= -400uA
= -100uA
= 0.4V
= 0.1V
OUT
-
-
-
-
-
CC
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
= 0 mA
CC
max
max
CC
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
-
3.3V Device
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
HY27US(08/16)121M Series
V
HY27SS(08/16)121M Series
CC
±
±
Max
0.8
0.4
2.5
20
20
20
50
1
+0.3
-
-
10
10
V
V
CC
CC
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
1.8V Device
Typ
10
8
8
8
4
-
-
-
-
-
-
V
CC
±
±
Max
0.4
0.1
1.5
15
15
15
50
1
+0.3
-
-
10
10
Unit
mA
mA
mA
mA
mA
uA
uA
uA
27
V
V
V
V
V