ATSAM3S4CA-AU Atmel, ATSAM3S4CA-AU Datasheet - Page 298

• Manufacturer Part Number: ATSAM3S4CA-AU
• Description: IC MCU 32BIT 256KB FLASH 100LQFP
• Manufacturer: Atmel
• Series: SAM3Sr

Specifications of ATSAM3S4CA-AU

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 64MHz
• Connectivity: EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 1.62 V ~ 1.95 V
• Data Converters: A/D 16x10/12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Controller Family/series: ATSAM3S
• No. Of I/o's: 79
• Ram Memory Size: 48KB
• Cpu Speed: 64MHz
• No. Of Timers: 6
• Rohs Compliant: Yes
• Processor Series: ATSAM3x
• Core: ARM Cortex M3
• 3rd Party Development Tools: JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: ATSAM3S-EK
• Cpu Family: AT91
• Device Core: ARM Cortex-M3
• Device Core Size: 32b
• Frequency (max): 64MHz
• Total Internal Ram Size: 48KB
• # I/os (max): 79
• Number Of Timers - General Purpose: 6
• Operating Supply Voltage (typ): 1.8/3.3V
• Operating Supply Voltage (max): 1.95/3.6V
• Operating Supply Voltage (min): 1.62V
• On-chip Adc: 16-chx12-bit
• On-chip Dac: 2-chx12-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Package Type: LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Figure 18-6. Example of Partial Page Programming
18.3.3.3
18.3.3.4
298
X words
X words
X words
X words
SAM3S Preliminary
Erase Commands
Lock Bit Protection
So Page Y erased
Erase All Flash
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
32-bit wide
Step 1.
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
Two errors can be detected in the EEFC_FSR register after a programming sequence:
By using the WP command, a page can be programmed in several steps if it has been erased
before (see
The Partial Programming mode works only with 128-bit (or higher) boundaries. It cannot be used
with boundaries lower than 128 bits (8, 16 or 32-bit for example).
Erase commands are allowed only on unlocked regions.
The erase sequence is:
Two errors can be detected in the EEFC_FSR register after a programming sequence:
Lock bits are associated with several pages in the embedded Flash memory plane. This defines
lock regions in the embedded Flash memory plane. They prevent writing/erasing protected
pages.
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: the page to be programmed belongs to a locked region. A command must be
• Erase starts as soon as one of the erase commands and the FARG field are written in the
• When the programming completes, the FRDY bit in the Flash Programming Status Register
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: at least one page to be erased belongs to a locked region. The erase command
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
previously run to unlock the corresponding region.
Flash Command Register.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
has been refused, no page has been erased. A command must be run previously to unlock
the corresponding region.
Figure
Programming of the second part of Page Y
18-6).
FF
FF
FF
CA FE
CA FE
CA FE
FF
FF
FF
FF
FF
FF
32-bit wide
FF
FF
FF
Step 2.
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
CA
CA
CA
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FE
FE
FE
Programming of the third part of Page Y
FF
FF
FF
CA FE
CA FE
CA FE
DE CA
DE CA
DE CA
FF
FF
FF
32-bit wide
FF
FF
FF
FF
FF
FF
Step 3.
...
...
...
...
FF
FF
FF
CA
CA
CA
DE CA
DE CA
DE CA
FF
FF
FF
6500C–ATARM–8-Feb-11
FF
FF
FF
FE
FE
FE
FF
FF
FF