mc68hc908ld64 Freescale Semiconductor, Inc, mc68hc908ld64 Datasheet - Page 70

• Manufacturer Part Number: mc68hc908ld64
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory
4.7 FLASH Program Operation
Data Sheet
70
NOTE:
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80, and $XXC0. Use this step-by-step procedure to program
a row of FLASH memory
In order to avoid program disturbs, the row must be erased before any
byte on that row is programmed.
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the same FLASH array that is being
programmed or erased. While these operations must be performed in
the order shown, other unrelated operations may occur between the
steps. Do not exceed t
Characteristics.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. For 47,616-byte array: Write data to the FLASH address to be
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
range desired.
For 13K-byte array: Write even address data to OSDEHBUF
programmed.
mode again.
FLASH Memory
rcv
PROG
nvh
(min 1µs), the memory can be accessed in read
PROG
nvs
pgs
(min. 5µs).
(Figure 4-5
(min. 5µs).
(min. 10µs).
(min. 20µs).
then write odd address data to the odd
FLASH address to be programmed.
maximum. See
programmed.
is a flowchart representation):
24.14 FLASH Memory
MC68HC908LD64
Freescale Semiconductor
—
Rev. 3.0