mc68hc908ld64 Freescale Semiconductor, Inc, mc68hc908ld64 Datasheet - Page 68

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mc68hc908ld64

Manufacturer Part Number
mc68hc908ld64
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet
FLASH Memory
4.5 FLASH Block Erase Operation
Data Sheet
68
NOTE:
NOTE:
The minimum erase size for the FLASH memory is one block, and is
carried out by the block erase operation. For memory $0C00–$0FFF, a
block consists of 128 consecutive bytes starting from addresses $xx00
or $xx80. For memory $1000–$3FFF and $4000–$F9FF, a block
consists of 512 consecutive bytes starting from addresses $x000,
$x200, $x400, $x600, $x800, $xA00, $xC00, or $xE00.
The 32-byte user vectors, $FFE0–$FFFF, cannot be erased by the block
erase operation because of security reasons. Mass erase is required to
erase this block.
Use the following procedure to erase a block of FLASH memory:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the same FLASH array that is being
programmed or erased. While these operations must be performed in
the order as shown, but other unrelated operations may occur between
the steps.
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the block address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After a time, t
register.
range desired.
read mode.
FLASH Memory
rcv
(min. 1µs), the memory can be accessed again in
nvs
Erase
nvh
(min. 5µs)
(min. 5µs)
(min. 10ms)
MC68HC908LD64
Freescale Semiconductor
Rev. 3.0

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