mc68hc908ld64 Freescale Semiconductor, Inc, mc68hc908ld64 Datasheet - Page 355

• Manufacturer Part Number: mc68hc908ld64
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

24.14 FLASH Memory Characteristics
MC68HC908LD64
Freescale Semiconductor
Notes:
Program bus clock frequency
FLASH block size
FLASH programming size
Read bus clock frequency
Page erase time
Mass erase time
PGM/ERASE to HVEN set up time
High-voltage hold time
High-voltage hold time (mass erase)
Program hold time
Program time
Return to read time
Cumulative program HV period
Row erase endurance
Row program endurance
Data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. t
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
9. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
$0C00–$0FFF
$1000–F9FF
4,7616 bytes array
13K-bytes array
memory.
memory.
HVEN to logic 0.
t
erase / program cycles.
erase / program cycles.
specified.
READ
rcv
HV
HV1
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is the t
is defined as the frequency range for which the FLASH memory can be read.
HV
spec for 13K-bytes array
Characteristic
—
(9)
Rev. 3.0
Table 24-17. FLASH Memory Electrical Characteristics
(7)
(8)
nvs
+ t
nvh
MErase
Erase
+ t
pgs
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
+ (t
PROG
×
t
64) ≤ t
Symbol
t
MErase
f
Erase
t
Read
t
t
t
HV1
PROG
rcv
HV
t
t
t
t
nvhl
—
—
—
nvh
pgs
—
—
—
nvs
—
(4)
(5)
(6)
(1)
(2)
HV
(3)
max.
Min
32k
100
10k
10k
10
10
20
20
10
—
—
1
5
5
1
FLASH Memory Characteristics
128
512
64
Electrical Specifications
Max
6M
40
—
—
—
—
—
—
—
—
—
—
—
6
3
Data Sheet
Cycles
Cycles
Bytes
Bytes
Bytes
Years
MHz
Unit
ms
ms
ms
ms
Hz
µs
µs
µs
ns
µs
µs
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