EP1AGX20CF484C6N Altera, EP1AGX20CF484C6N Datasheet - Page 96

• Manufacturer Part Number: EP1AGX20CF484C6N
• Description: IC ARRIA GX FPGA 20K 484FBGA
• Manufacturer: Altera
• Series: Arria GXr

Specifications of EP1AGX20CF484C6N

• Number Of Logic Elements/cells: 21580
• Number Of Labs/clbs: 1079
• Total Ram Bits: 1229184
• Number Of I /o: 230
• Voltage - Supply: 1.15 V ~ 1.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 484-FBGA
• Family Name: Arria™ GX
• Number Of Logic Blocks/elements: 21580
• # I/os (max): 230
• Process Technology: CMOS
• Operating Supply Voltage (typ): 1.2V
• Logic Cells: 21580
• Ram Bits: 1229184
• Operating Supply Voltage (min): 1.15V
• Operating Supply Voltage (max): 1.25V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 484
• Package Type: FC-FBGA
• No. Of Macrocells: 21580
• Family Type: Arria GX
• No. Of I/o's: 230
• Operating Frequency Max: 622.08MHz
• Operating Temperature Range: 0°C To +85°C
• Logic Case Style: BGA
• No. Of Pins: 484
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Gates: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 544-2395

2–90
Figure 2–76. Output Timing Diagram in DDR Mode
External RAM Interfacing
Table 2–23. DQS and DQ Bus Mode Support
Arria GX Device Handbook, Volume 1
EP1AGX20
EP1AGX35
EP1AGX50/60
EP1AGX90
Note to
(1) Numbers are preliminary until devices are available.
Device
Table
2–23:
484-pin FineLine BGA
484-pin FineLine BGA
780-pin FineLine BGA
484-pin FineLine BGA
780-pin FineLine BGA
1,152-pin FineLine
BGA
1,152-pin FineLine
BGA
From Internal
Registers
The Arria GX IOE operates in bidirectional DDR mode by combining the DDR input
and DDR output configurations. The negative-edge-clocked OE register holds the OE
signal inactive until the falling edge of the clock to meet DDR SDRAM timing
requirements.
In addition to the six I/O registers in each IOE, Arria GX devices also have dedicated
phase-shift circuitry for interfacing with external memory interfaces, including DDR,
DDR2 SDRAM, and SDR SDRAM. In every Arria GX device, the I/O banks at the top
(Banks 3 and 4) and bottom (Banks 7 and 8) of the device support DQ and DQS signals
with DQ bus modes of ×4, ×8/×9, ×16/×18, or ×32/×36.
of DQ and DQS buses that are supported per device.
A compensated delay element on each DQS pin automatically aligns input DQS
synchronization signals with the data window of their corresponding DQ data
signals. The DQS signals drive a local DQS bus in the top and bottom I/O banks. This
DQS bus is an additional resource to the I/O clocks and is used to clock DQ input
registers with the DQS signal.
DDR output
Package
CLK
A1
B1
B1
(Note 1)
Number of
×4 Groups
A1
18
18
36
36
2
2
2
B2
A2
B2
A2
A3
B3
B3
×8/×9 Groups
Number of
A3
18
18
A4
B4
0
0
8
0
8
B4
A4
×16/×18 Groups
Number of
Table 2–23
© December 2009 Altera Corporation
0
0
4
0
4
8
8
Chapter 2: Arria GX Architecture
shows the number
×32/×36 Groups
Number of
0
0
0
0
0
4
4
I/O Structure