ML610Q409-NNNTBZ03A7 Rohm Semiconductor, ML610Q409-NNNTBZ03A7 Datasheet - Page 384

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ML610Q409-NNNTBZ03A7

Manufacturer Part Number
ML610Q409-NNNTBZ03A7
Description
MCU 8BIT 16K FLASH 4CH 100-TQFP
Manufacturer
Rohm Semiconductor
Series
-r

Specifications of ML610Q409-NNNTBZ03A7

Core Processor
nX-U8/100
Core Size
8-Bit
Speed
2MHz
Connectivity
SSP, UART/USART
Peripherals
LCD, Melody Driver, POR, PWM, WDT
Number Of I /o
22
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.25 V ~ 3.6 V
Data Converters
A/D 2x16b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 70°C
Package / Case
100-TFQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ML610Q409-NNNTBZ03A7
Manufacturer:
Rohm Semiconductor
Quantity:
10 000
ML610Q407/ML610Q408/ML610Q409 User's Manual
Appendix C Electrical Characteristics
Note:
・Please have the shortest layout for the common node (wiring patterns which are connected to the external capacitors, resistors and IN0/IN1
pin), including CVR0/CVR1. Especially, do not have long wiring between IN0/IN1 and RS0/RS1. The coupling capacitance on the wires may
occur incorrect A/D conversion. Also, please do not have signals which may be a source of noise around the node.
・When RT0/RT1 (Thermistor and etc.) requires long wiring due to the restricted placement, please have V
・Please make wiring to components (capacitor, resistor, and so on) necessary for objective measurement. Wiring to reserved components may
affect to the A/D conversion operation by noise the components itself may have.
VIH
VIL
Condition for V
*
same conditions.
1
: Kfx is the ratio of the oscillation frequency by the sensor resistor to the oscillation frequency by the reference resistor on the
Oscillation frequency
Oscillation frequency
RS to RT oscillation
RS to RT oscillation
Oscillation resistor
Kfx =
frequency ratio
frequency ratio
V
V
V
V
Parameter
DD
DD
DD
DD
(Note 1)
= 1.5V
= 1.5V
= 3.0V
= 3.0V
f
f
OSCX
(V
OSCX
DD
DD
=1.25 to 3.6V
(RT0-CS0 oscillation)
(RS0-CS0 oscillation)
=1.25 to 3.6V, V
( x = 1, 2, 3 )
*1
*1
C
IN0
V
CS0
RS0,RS1,RT0,
V
RT0-1,RT1
DD
Symbol
*1: Input logic circuit to determine the
specified measuring conditions.
CVR0
f
f
f
f
f
f
SS
RCT0
OSC1
OSC2
OSC3
OSC1
OSC2
OSC3
Kf1
Kf2
Kf3
Kf1
Kf2
Kf3
C
=0V, Ta=-20 to +70°C, Ta=-40 to +85°C for P version, unless otherwise specified)
V
L
DDL
,
RS0
f
OSCX
f
OSCX
Resistor for oscillation=105kΩ
Resistor for oscillation=105kΩ
Resistor for oscillation=15kΩ
Resistor for oscillation=15kΩ
RT0
Resistor for oscillation=6kΩ
Resistor for oscillation=6kΩ
RT0, RT0-1, RT1=100kΩ
RT0, RT0-1, RT1=100kΩ
(RT0-1-CS0 oscillation)
RT0, RT0-1, RT1=10kΩ
RT0, RT0-1, RT1=10kΩ
CS0, CT0, CS1≥740pF
(RS0-CS0 oscillation)
Appendix C–12
RT0, RT0-1, RT1=1kΩ
RT0, RT0-1, RT1=1kΩ
IN1 CS1 RS1 RT1
Condition
CVR1
RCM
V
SS
,
f
f
OSCX
OSCX
81.93
35.32
2.139
0.973
0.142
85.28
35.72
5.189
2.227
0.982
0.141
5.22
Min.
RT0, RT0-1, RT1: 1kΩ/10kΩ/100kΩ
RA0, RA0-1, RA1: 5kΩ
RS0, RS1: 15kΩ
CS0, CT0, CS1: 560pF
CVR0, CVR1: 820pF
1
(RT1-CS1 oscillation)
(RS1-CS1 oscillation)
Frequency measurement (f
SS
Rating
93.16
38.75
2.381
0.147
94.58
38.87
5.622
2.432
0.145
(GND) trace next to the signal.
Typ.
5.65
1
1
101.2
41.48
2.632
1.028
0.152
103.3
41.78
6.012
2.626
1.018
0.149
Max.
6.03
OSCX
Unit
kHz
kHz
kHz
kHz
kHz
kHz
)

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