MCHC908MR8CFAE Freescale Semiconductor, MCHC908MR8CFAE Datasheet - Page 60

IC MCU 8K FLASH 8MHZ PWM 32-LQFP

MCHC908MR8CFAE

Manufacturer Part Number
MCHC908MR8CFAE
Description
IC MCU 8K FLASH 8MHZ PWM 32-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MCHC908MR8CFAE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
LVD, POR, PWM
Number Of I /o
16
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Controller Family/series
HC08
No. Of I/o's
16
Ram Memory Size
256Byte
Cpu Speed
8MHz
No. Of Timers
2
Rohs Compliant
Yes
Processor Series
HC08MR
Core
HC08
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Operating Supply Voltage
0 V to 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
8 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCHC908MR8CFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
FLASH Memory
4.3 FLASH Programming Algorithm
Technical Data
60
NOTE:
The time between each FLASH address change, or the time between
the last FLASH address programmed to clear the PGM bit, must not
exceed the maximum programming time, t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
Refer to
FLASH memory.
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After a time, t
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for a time, t
9. Repeat step 7 and step 8 until all the bytes within the row are
address range desired.
programmed.
read mode again.
Figure 4-2
Characteristics.
FLASH Memory
RCV
for an algorithm for programming a row (32 bytes) of
NVS
PGS
PROG
NVH
(typically 1 µs), the memory can be accessed in
(minimum of 10 µs).
(minimum of 5 µs).
(minimum of 5 µs).
(minimum of 30 µs).
PROG
PROG
MC68HC908MR8 — Rev 4.1
.
maximum. See
Freescale Semiconductor
21.7

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