SAM9XE512 Atmel Corporation, SAM9XE512 Datasheet - Page 183

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SAM9XE512

Manufacturer Part Number
SAM9XE512
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9XE512

Flash (kbytes)
512 Kbytes
Pin Count
217
Max. Operating Frequency
180 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
2
Uart
6
Ssc
1
Ethernet
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
Yes
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
312
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.65 to 1.95
Fpu
No
Mpu / Mmu
No / Yes
Timers
6
Output Compare Channels
6
Input Capture Channels
6
32khz Rtc
Yes
Calibrated Rc Oscillator
No
22.6.7.2
6254C–ATARM–22-Jan-10
NAND Flash Signals
Figure 22-6. NAND Flash Signal Multiplexing on EBI Pins
The address latch enable and command latch enable signals on the NAND Flash device are
driven by address bits A22 and A21 of the EBI address bus. The user should note that any bit on
the EBI address bus can also be used for this purpose. The command, address or data words
on the data bus of the NAND Flash device are distinguished by using their address within the
NCSx address space. The chip enable (CE) signal of the device and the ready/busy (R/B) sig-
nals are connected to PIO lines. The CE signal then remains asserted even when NCSx is not
selected, preventing the device from returning to standby mode.
SMC
NWR0_NWE
NRD_NOE
AT91SAM9XE128/256/512 Preliminary
NCSx
NAND Flash Logic
NANDOE
NANDWE
NANDOE
NANDWE
183

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