SAM7X256 Atmel Corporation, SAM7X256 Datasheet - Page 131

• Manufacturer Part Number: SAM7X256
• Manufacturer: Atmel Corporation

Specifications of SAM7X256

• Flash (kbytes): 256 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 55 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 62
• Ext Interrupts: 62
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 2
• Twi (i2c): 1
• Uart: 3
• Can: 1
• Ssc: 1
• Ethernet: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 64
• Self Program Memory: NO
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.3
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

20.3.4.2
20.3.4.3
6120I–ATARM–06-Apr-11
Flash Write Command
Flash Full Erase Command
any valid address in the memory plane. This address must be word-aligned. The address is
automatically incremented.
Table 20-20. Read Command
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-21. Write Command
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. How-
ever, the lock bit is automatically set at the end of the Flash write operation. As a lock region is
composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. How-
ever, before programming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
Read/Write
Write
Write
Read
Read
...
Read
Read/Write
Write
Write
Write
Write
Write
Write
• before access to any page than the current one
• at the end of the number of words transmitted
DR Data
(Number of Words to Read) << 16 | READ
Address
Memory [address]
Memory [address+4]
...
Memory [address+(Number of Words to Read - 1)* 4]
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
SAM7X512/256/128
131