SAM7X256 Atmel Corporation, SAM7X256 Datasheet - Page 109

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SAM7X256

Manufacturer Part Number
SAM7X256
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7X256

Flash (kbytes)
256 Kbytes
Pin Count
100
Max. Operating Frequency
55 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
62
Ext Interrupts
62
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
2
Twi (i2c)
1
Uart
3
Can
1
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
64
Self Program Memory
NO
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
Figure 19-6. Example of Partial Page Programming
19.2.4.2
6120I–ATARM–06-Apr-11
16 words
16 words
16 words
16 words
Erase All Command
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
Erase All Flash
Page 7 erased
32 bits wide
Step 1.
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
The Partial Programming mode works only with 32-bit (or higher) boundaries. It cannot be used
with boundaries lower than 32 bits (8 or 16-bit for example).
After programming, the page (the whole lock region) can be locked to prevent miscellaneous
write or erase sequences. The lock bit can be automatically set after page programming using
WPL.
Data to be written are stored in an internal latch buffer. The size of the latch buffer corresponds
to the page size. The latch buffer wraps around within the internal memory area address space
and appears to be repeated by the number of pages in it.
Note:
Data are written to the latch buffer before the programming command is written to the Flash
Command Register MC_FCR. The sequence is as follows:
Two errors can be detected in the MC_FSR register after a programming sequence:
The entire memory can be erased if the Erase All Command (EA) in the Flash Command Regis-
ter MC_FCR is written.
• Write the full page, at any page address, within the internal memory area address space
• Programming starts as soon as the page number and the programming command are written
• When programming is completed, the bit FRDY in the Flash Programming Status Register
• Programming Error: A bad keyword and/or an invalid command have been written in the
• Lock Error: The page to be programmed belongs to a locked region. A command must be
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
using only 32-bit access.
to the Flash Command Register. The FRDY bit in the Flash Programming Status Register
(MC_FSR) is automatically cleared.
(MC_FSR) rises. If an interrupt was enabled by setting the bit FRDY in MC_FMR, the
interrupt line of the Memory Controller is activated.
MC_FCR register.
previously run to unlock the corresponding region.
Writing of 8-bit and 16-bit data is not allowed and may lead to unpredictable data corruption.
Programming of the second part of Page 7
FF
FF
FF
CA FE
CA FE
CA FE
FF
FF
FF
FF
FF
FF
(NEBP = 1)
32 bits wide
FF
FF
FF
FF
FF
FF
FF
FF
FF
Step 2.
...
...
...
...
CA
CA
CA
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FE
FE
FE
Programming of the third part of Page 7
SAM7X512/256/128
CA FE
CA FE
CA FE
FF
FF
FF
DE CA
DE CA
DE CA
FF
FF
FF
(NEBP = 1)
32 bits wide
FF
FF
FF
FF
FF
FF
Step 3.
...
...
...
...
CA
CA
CA
FF
FF
FF
DE CA
DE CA
DE CA
FF
FF
FF
FF
FF
FF
FE
FE
FE
FF
FF
FF
109

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