SAM7X256 Atmel Corporation, SAM7X256 Datasheet - Page 124

• Manufacturer Part Number: SAM7X256
• Manufacturer: Atmel Corporation

Specifications of SAM7X256

• Flash (kbytes): 256 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 55 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 62
• Ext Interrupts: 62
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 2
• Twi (i2c): 1
• Uart: 3
• Can: 1
• Ssc: 1
• Ethernet: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 64
• Self Program Memory: NO
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.3
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

20.2.5.2
20.2.5.3
124
SAM7X512/256/128
Flash Write Command
Flash Full Erase Command
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-9.
Step
1
2
3
4
5
...
n
n+1
n+2
n+3
...
Step
1
2
• before access to any page other than the current one
• when a new command is validated (MODE = CMDE)
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command
Full Erase Command
MODE[3:0]
CMDE
ADDR0
ADDR1
DATA
DATA
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
WP or WPL or EWP or EWPL
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
6120I–ATARM–06-Apr-11