D12363VF33V Renesas Electronics America, D12363VF33V Datasheet - Page 777
![IC H8S/2363 MCU ROMLESS 128QFP](/photos/12/40/124072/d12363vf33v_sml.jpg)
D12363VF33V
Manufacturer Part Number
D12363VF33V
Description
IC H8S/2363 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of D12363VF33V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
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Price
Company:
Part Number:
D12363VF33V
Manufacturer:
ST
Quantity:
67 000
Company:
Part Number:
D12363VF33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
D12363VF33V
Manufacturer:
RENSAS
Quantity:
20 000
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The flash memory has the following features. Figure 20.1 shows a block diagram of the flash
memory.
20.1
• Size
Product Classification
H8S/2368F
H8S/2364F
H8S/2362F
H8S/2361F
H8S/2360F
• Two flash-memory MATs according to LSI initiation mode
• Programming/erasing interface by the download of on-chip program
• Programming/erasing time
• Number of programming
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 512 kbytes
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
The user branch is also supported.
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
8 µs per byte. The erasing time is 750 ms (typ) per 64-kbyte block.
The number of flash memory programming can be up to 100 times.
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
(H8S/2368F), 384 kbytes (H8S/2364F), 256 kbytes (H8S/2362F, H8S/2361F, H8S/2360F)
Features
HD64F2368
HD64F2364
HD64F2362
HD64F2361
HD64F2360
ROM Size
512 kbytes
384 kbytes
256 kbytes
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 717 of 980
ROM Address
H'000000 to H'07FFFF
(Modes 3 to 5 and 7)
H'000000 to H'05FFFF
(Modes 3 to 5 and 7)
H'000000 to H'03FFFF
(Modes 3 to 5 and 7)
REJ09B0050-0600
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